| PART |
Description |
Maker |
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| EM481M3244VBA-75FE EM481M3244VBA-7FE EM481M3244VBA |
256Mb (2M?4Bank?32) Synchronous DRAM
256Mb (2M麓4Bank麓32) Synchronous DRAM
256Mb (2M′4Bank′32) Synchronous DRAM
|
List of Unclassifed Man...
Eorex Corporation
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| EM488M3244VBB EM48AM3244VBB-75FE EM48AM3244VBB-7FE |
256Mb (2M?4Bank?32) Synchronous DRAM
256Mb (2M隆驴4Bank隆驴32) Synchronous DRAM
256Mb (2M】4Bank】32) Synchronous DRAM
256Mb (2M×4Bank×32) Synchronous DRAM
|
List of Unclassifed Manufacturers
ETC
Eorex Corporation
http://
|
| ISS-8 |
VDE-insulated Allen wrench with double-layer insulation, for double the safety
|
PHOENIX CONTACT
|
| NX3L2467 NX3L2467HR NX3L2467GU NX3L2467PW |
Dual low-ohmic double-pole double-throw analog switch
|
NXP Semiconductors
|
| 1300940218 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
